艾博康公司推出創新型的無源晶振吸引用戶的關注點ABM11-24.000MHZ-D2X-T3，物聯網市場正以爆發性的速度增長，行業預計物聯網相關硬件、軟件和其他綜合解決方案將達到4700億美元。目前154億臺設備的安裝基礎預計到2020年將超過307億臺，而這些產品之中都少不了石英晶振產品相伴左右。

包括英特爾、ARM、三星和高通在內的主要IC OEM公司都積極致力于將工藝幾何尺寸降低到10nm甚至7nm的FinFET架構的開發。

艾博康公司推出創新型的無源晶振吸引用戶的關注點ABM11-24.000MHZ-D2X-T3，這一行業趨勢背后的主要驅動力與總消費的減少有關動力，同時提高整體性能。這一努力旨在促進電池驅動的終端解決方案(消費、醫療、物聯網、工業等)的實際實施，在功能豐富的環境中需要極低的功耗，低功耗對于無源晶體來說切入點更加高。然而，這些進步顯著地影響了傳統的時鐘電路。

Manufacturer Part Number 原廠編碼	Manufacturer廠家	Series型號	Type 系列	Frequency頻率	Package / Case包裝/封裝
ABM10-26.000MHZ-7-A15-T	Abracon晶振	ABM10	MHz Crystal	26MHz	4-SMD, No Lead
ABM10-40.000MHZ-8-7-A15-T	Abracon晶振	ABM10	MHz Crystal	40MHz	4-SMD, No Lead
ABM3B-28.63636MHZ-10-1-U-T	Abracon晶振	ABM3B	MHz Crystal	28.63636MHz	4-SMD, No Lead
ABM3B-40.000MHZ-10-1-U-T	Abracon晶振	ABM3B	MHz Crystal	40MHz	4-SMD, No Lead
ABM3B-12.800MHZ-10-1-U-T	Abracon晶振	ABM3B	MHz Crystal	12.8MHz	4-SMD, No Lead
ABM3-40.000MHZ-D2Y-F-T	艾博康晶振	ABM3	MHz Crystal	40MHz	2-SMD, No Lead
ABM3B-24.576MHZ-10-1-U-T	Abracon晶振	ABM3B	MHz Crystal	24.576MHz	4-SMD, No Lead
ABM3B-13.000MHZ-10-1-U-T	Abracon晶振	ABM3B	MHz Crystal	13MHz	4-SMD, No Lead
ABM9-12.000MHZ-10-D1Y-T	Abracon晶振	ABM9	MHz Crystal	12MHz	4-SMD, No Lead
ABS25-60.000KHZ-T	Abracon晶振	ABS25	kHz Crystal (Tuning Fork)	60kHz	4-SOJ, 5.50mm pitch
ABS25-100.000KHZ-T	Abracon晶振	ABS25	kHz Crystal (Tuning Fork)	100kHz	4-SOJ, 5.50mm pitch
ABM8-37.500MHZ-12-1-U-T	Abracon晶振	ABM8	MHz Crystal	37.5MHz	4-SMD, No Lead
ABM11-24.000MHZ-D2X-T3	Abracon晶振	ABM11	MHz Crystal	24MHz	4-SMD, No Lead
ABM11-27.000MHZ-D2X-T3	Abracon晶振	ABM11	MHz Crystal	27MHz	4-SMD, No Lead
ABM10-48.000MHZ-E20-T	Abracon晶振	ABM10	MHz Crystal	48MHz	4-SMD, No Lead
ABM11-26.000MHZ-D2X-T3	Abracon晶振	ABM11	MHz Crystal	26MHz	4-SMD, No Lead
ABM11-38.400MHZ-D2X-T3	Abracon晶振	ABM11	MHz Crystal	38.4MHz	4-SMD, No Lead

由于低功率操作變得至關重要，電流鏡像偏置在皮爾斯振蕩器環路的逆變放大器級是“饑餓”放大器。這種方法對逆變放大器塊的跨導有顯著影響，反過來又對閉環振蕩器電路的正向增益裕度(GM)有深遠影響。

Abracon發布編碼ABM11-24.000MHZ-D2X-T3是一款無源晶振，石英晶振，2.0 x 1.6 x 0.59mm超微型封裝。適用于符合RoHS標準的回流。接縫密封陶瓷包裝與金屬蓋保證高精度、高可靠性,移動電話，尋呼機。通信和測試設備。高密度應用,PCMCIA和無線應用。
The IoT market is on an explosive pace of growth with industry projections of $470 billion for IoT related hardware, software, and other comprehensive solutions. The current installed base of 15.4 billion devices is expected to exceed 30.7 billion by 2020.

Major IC OEM’s including Intel, ARM, Samsung and QUALCOMM are actively engaged in the development of reduced process geometries down to 10nm and even 7nm FinFET architectures.
The primary driving force behind this industry trend is related to the reduction in total consumed
power, while improving overall performance. This effort is being undertaken to facilitate the practical implementation of battery powered end-solutions (consumer, medical, IoT, industrial, etc.), requiring extremely low power in a feature-rich environment. These advancements, however, have significantly impacted the traditional clocking circuit.
As the low power operation becomes paramount, the current mirrors biasing the inverter amplifier stage in the Pierce Oscillator loop are “starving” the amplifier. This approach has a significant impact on the transconductance of the inverter amplifier block which, in-turn, has a profound effect on the forward gain margin (GM) of the closed-loop oscillator circuit.

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